Hangzhou Silan Integrated Circuit Co., Ltd (Silan-IC), founded in Jan 2001, is wholly invested by Silan Microelectronics and specializes in wafer manufacturing. The current registered capital is RMB 400 million, and the total investment capital has reached RMB 800 million. It is located in Hangzhou Xiasha Economic and Technology Development Area. The first wafer fab line (Fab 1) began to manufacture wafers by the end of 2002, and the clean-room is 3600 square meters. Currently, the bipolar products and bipolar process based discrete devices such as Schottky Barrier Diodes, Switching Diodes, Zener Diodes, etc., are manufactured in Fab 1 at more than 70000 wafers per month. The second wafer fab line (Fab 2) was put into use in March 2005 with a 7000 square meter clean-room. The products based on 0.8um BiCMOS and BCD have been in production. Also, the power MOS-FET has been in mass production in Fab 2. Hangzhou Silan Integrated Circuit Co. Ltd concentrates on the R&D of special processes, to develop value-added integrated products.